H27UBG8T2BTA データシートの表示（PDF） - Hynix Semiconductor
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H27UBG8T2BTA Datasheet PDF : 57 Pages
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Preliminary
H27UBG8T2BTR-BC Series
32Gb(4096M x 8bit) Legacy MLC NAND Flash
2.5. Pin Capacitance (TA=25℃, F=1.0㎒)
Symbol
Parameter
Test Condition
Min
CIN
Input Capacitance
VIN = 0V
-
CI/O
Input/Output Capacitance
VIL = 0V
-
Max
10
10
Unit
pF
pF
2.6. Program/ Read / Erase Characteristics
Parameter
Symbol
Min
Program (following 10h)
tPROG
-
Cache Program (following 15h)
tCBSYW
-
Multi-Plane Program / Multi-Plane Cache Program /
Multi-Plane Copy-Back Program (following 11h)
tDBSY
-
Cache Read / Multi-Plane Cache Read
(following 31h/3Fh)
tCBSYR
Block Erase / Multi-Plane Block Erase
Number of partial Program Cycles
in the same page
tBERS
-
NOP
-
Notes:
Typical value is measured at VCC=3.3V, TA=25℃. Not 100% tested.
Typ
1300
3
3
3.5
-
Max
3500
3500
5
200
10
1
Unit
us
us
us
us
ms
cycles
Rev 0.7 / Jan. 2011
18
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