H27UBG8T2BTA データシートの表示（PDF） - Hynix Semiconductor
部品番号
コンポーネント説明
一致するリスト
H27UBG8T2BTA Datasheet PDF : 57 Pages
| |||
Preliminary
H27UBG8T2BTR-BC Series
32Gb(4096M x 8bit) Legacy MLC NAND Flash
2. Electrical Characteristics
2.1. Valid Blocks
Symbol
Min
Typ
Max
Unit
Valid Block Number
NVB
2000
2048
Blocks
Notes:
1. The 1st block is guaranteed to be a valid block at the time of shipment.
2. This single device has a maximum of 48 invalid blocks.
3. Invalid blocks are one that contains one or more bad bits. The device may contain bad blocks
upon shipment.
2.2. Absolute Maximum Rating
Symbol
TA
TBIAS
TSTG
VIO
VCC
Parameter
Ambient Operating Temperature
(Commercial Temperature Range)
Ambient Operating Temperature
(Extended Temperature Range)
Ambient Operating Temperature
(Industrial Temperature Range)
Temperature Under Bias
Storage Temperature
Input or Output Voltage
Supply Voltage
Value
Min
0 to 70
-25 to 85
-40 to 85
-50 to 125
-65 to 150
-0.6 to 4.6
-0.6 to 4.6
Unit
℃
℃
℃
℃
℃
V
V
Notes:
1. Except for the rating “Operating Temperature Range”, stresses above those listed in the Table
“Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only and operation of the device at these or any other conditions above those indicated in the
Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Refer also to the Hynix SURE Program and other relevant quality documents.
2. Minimum Voltage may undershoot to -2V during transition and for less than 20ns during transitions.
Rev 0.7 / Jan. 2011
16
Share Link: 