H27UBG8T2BTA データシートの表示（PDF） - Hynix Semiconductor
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H27UBG8T2BTA Datasheet PDF : 57 Pages
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Preliminary
H27UBG8T2BTR-BC Series
32Gb(4096M x 8bit) Legacy MLC NAND Flash
2.3. DC and Operating Characteristics
Parameter
Power on reset current
Operating
Current
Read
Program
Erase
Stand-by Current
(TTL)
Stand-by Current
(CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage
Output High Voltage Level
Output Low Voltage Level
Output Low Current (R/B#)
Symbol
Test
Conditions
Min
FFh command
ICC0
input after
-
power on
tRC= tRC(min),
ICC1
CE#=VIL,
-
IOUT=0 ㎃
ICC2
-
ICC3
-
ICC4
CE#=VIH,
WP#=0V/VCC
-
ICC5
CE#=VCC-0.2,
WP#=0V/VCC
-
VIN=0 to VCC(MAX)
-
ILO
VOUT=0 to VCC(MAX)
-
VIH
-
Vccx0.8
VIL
-
-0.3
VOH
IOH=-400 ㎂
2.4
VOL
IOL=2.1 ㎃
-
IOL (R/B#)
VOL=0.4V
8
3.3V
Typ
-
-
-
-
-
10
-
-
-
-
-
-
10
Max
50 per
device
50
50
50
1
50
±10
±10
Vcc+0.3
0.2xVcc
-
0.4
-
Units
mA
mA
mA
mA
mA
uA
uA
uA
V
V
V
V
mA
2.4. AC Test Conditions
Parameter
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load (2.7V-3.6V)
Value
2.7V ≤ VccQ ≤ 3.6V
0 V to VCC
5㎱
VCC / 2
1 TTL GATE and CL=50㎊
Note:
These parameters are verified device characterization and are not 100% tested.
Rev 0.7 / Jan. 2011
17
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