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MT28S4M16LCTG-10 データシート - Micron Technology

MT28S4M16LC image

部品番号
MT28S4M16LCTG-10

コンポーネント説明

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48 Pages

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Micron
Micron Technology Micron

GENERAL DESCRIPTION
This SyncFlash® data sheet is divided into two major sections. The SDRAM Interface Functional Description details compatibility with the SDRAM memory, and the Flash Memory Functional Description specifies the symmetrical-sectored flash architecture functional commands.


FEATURES
• 100 MHz SDRAM-compatible read timing
• Fully synchronous; all signals registered on
   positive edge of system clock
• Internal pipelined operation; column address can
   be changed every clock cycle
• Internal banks for hiding row access
• Programmable burst lengths: 1, 2, 4, 8, or full page
   (READ)
• LVTTL-compatible inputs and outputs
• Single +3.3V ±0.3V power supply
   – Additional VHH hardware protect mode (RP#)
• Four-bank architecture supports true concurrent
   operations with zero latency:
      Read from any bank while performing a
      PROGRAM or ERASE operation to any other
      bank
• Deep power-down mode: 300µA maximum
• Cross-compatible Flash memory command set
• Industry-standard, SDRAM-compatible pinouts
   – Pins 36 and 40 are no connects for SDRAM

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

部品番号
コンポーネント説明
PDF
メーカー
SYNCFLASH® MEMORY
Micron Technology
SYNCFLASH® MEMORY
Micron Technology
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