Intel StrataFlash® Memory (J3)

Capitalizing on Intel’s 0.25 and 0.18 micron, two-bit-per-cell technology, the Intel StrataFlash® Memory (J3) device provides 2X the bits in 1X the space, with new features for mainstream performance. Offered in 256-Mbit (32-Mbyte), 128-Mbit (16-Mbyte), 64-Mbit, and 32-Mbit densities, the J3 device brings reliable, two-bitper-cell storage technology to the flash market segment. Benefits include more density in less space, high-speed interface, lowest cost-per-bit NOR device, support for code and data storage, and easy migration to future devices.

Product Features
■ Performance
   —110/115/120/150 ns Initial Access Speed
   —125 ns Initial Access Speed (256 Mbit density only)
   —25 ns Asynchronous Page mode Reads
   —30 ns Asynchronous Page mode Reads (256Mbit density only)
   —32-Byte Write Buffer
   —6.8 µs per byte effective programming time
■ Software
   —Program and Erase suspend support
   —Flash Data Integrator (FDI), Common Flash Interface (CFI) Compatible
■ Security
   —128-bit Protection Register
   —64-bit Unique Device Identifier
   —64-bit User Programmable OTP Cells
   —Absolute Protection with VPEN = GND
   —Individual Block Locking
   —Block Erase/Program Lockout during Power Transitions
■ Architecture
   —Multi-Level Cell Technology: High Density at Low Cost
   —High-Density Symmetrical 128-Kbyte Blocks
   —256 Mbit (256 Blocks) (0.18µm only)
   —128 Mbit (128 Blocks)
   —64 Mbit (64 Blocks)
   —32 Mbit (32 Blocks)
■ Quality and Reliability
   —Operating Temperature: -40 °C to +85 °C
   —100K Minimum Erase Cycles per Block
   —0.18 µm ETOX™ VII Process (J3C)
   —0.25 µm ETOX™ VI Process (J3A)
■ Packaging and Voltage
   —56-Lead TSOP Package
   —64-Ball Intel® Easy BGA Package
   —Lead-free packages available
   —48-Ball Intel® VF BGA Package (32 and 64 Mbit) (x16 only)
   —VCC = 2.7 V to 3.6 V
   —VCCQ = 2.7 V to 3.6 V