MT28S4M16LCTG-10 データシートの表示（PDF） - Micron Technology

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MT28S4M16LCTG-10

SYNCFLASH® MEMORY

Micron Technology 

4 MEG x 16

SYNCFLASH MEMORY

PIN DESCRIPTIONS (continued)

54-PIN TSOP

NUMBERS

20, 21

2, 4, 5, 7, 8, 10,

11,13, 42, 44, 45,

47, 48, 50, 51, 53

3, 9, 43, 49

6, 12, 46, 52

1, 14, 27

28, 41, 54

36

SYMBOL

BA0,

BA1

DQ0-

DQ15

VCCQ

VSSQ

VCC

VSS

VCCP

TYPE

Input

I/O

Supply

Supply

Supply

Supply

Supply

DESCRIPTION

Bank Address Input(s): BA0, BA1 define to which bank the command

is being applied. See Truth Tables 1 and 2.

Data I/O: Data bus.

DQ Power: Provide isolated power to DQs for improved noise

immunity.

DQ Ground: Provide isolated ground to DQs for improved noise

immunity.

Power Supply: 3.3V ±0.3V.

Ground.

Program/Erase Supply Voltage: VCCP must be tied externally to VCC. The

VCCP pin sources current during device initialization, PROGRAM and

ERASE operations.

4 Meg x 16 SyncFlash

MT28S4M16LC_6.p65 – Rev. 6, Pub. 9/01

6

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2001, Micron Technology, Inc.

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