MT28S4M16LCTG-10 データシートの表示（PDF） - Micron Technology

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MT28S4M16LCTG-10

SYNCFLASH® MEMORY

Micron Technology 

COMMANDS

Truth Table 2 provides a quick reference of available commands

for flash memory interface operation. A written description of each

command is found in the Flash Memory Functional Description sec-

tion.

TRUTH TABLE 2

FLASH MEMORY COMMAND SEQUENCES

(Notes: 1, 2, 3, 4, 5; see notes on the next page.)

OPERATION

READ DEVICE CONFIGURATION

READ STATUS REGISTER

CLEAR STATUS REGISTER

ERASE SETUP/CONFIRM

PROGRAM SETUP/PROGRAM

PROTECT BLOCK/CONFIRM

PROTECT DEVICE/CONFIRM

UNPROTECT BLOCKS/CONFIRM

ERASE NVMODE REGISTER

PROGRAM NVMODE REGISTER

FIRST CYCLE

SECOND CYCLE

THIRD CYCLE

BANK

BANK

BANK

CMD ADDR6 ADDR DQ RP# CMD7 ADDR ADDR DQ RP# CMD ADDR ADDR DQ8 RP# NOTES

LCR 90h Bank X H ACTIVE Row Bank X H READ CA Bank X

H

9, 10

LCR 70h

X

X H ACTIVE X

X

X H READ X

X

X

H

LCR 50h

X

XH

LCR 20h Bank X H ACTIVE Row Bank X H WRITE X Bank D0h H/VHH 11, 12, 13

LCR 40h Bank X H ACTIVE Row Bank X H WRITE Col Bank DIN H/VHH 11, 12, 13

LCR 60h Bank X H ACTIVE Row Bank X H WRITE X Bank 01h H/VHH 11, 12,

13, 14

LCR 60h Bank X H ACTIVE X Bank X H WRITE X Bank F1h VHH 11, 12

LCR 60h Bank X H ACTIVE X Bank X H WRITE X Bank D0h H/VHH 11, 12,

13, 15

LCR 30h Bank X H ACTIVE X Bank X H WRITE X Bank C0h H

11, 12

LCR A0h Bank X H ACTIVE X Bank X H WRITE X Bank X

H

11, 12

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