High Efficiency Heterojunction Power FET
• +39.5dBm TYPICAL OUTPUT POWER
• 18.0dB TYPICAL POWER GAIN AT 2GHz
• 0.4 X 12,000 MICRON RECESSED “MUSHROOM” GATE
• Si3N4PASSIVATION
• ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY
• Idss SORTED IN 300mA PER BIN RANGE