EPA160A-100P データシート - Excelics Semiconductor, Inc.
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EPA160A-100P
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Excelics Semiconductor, Inc.
High Efficiency Heterojunction Power FET
• NON-HERMETIC 100MIL METAL FLANGE PACKAGE
• +31.0dBm TYPICAL OUTPUT POWER
• 11.5dB TYPICAL POWER GAIN AT 12GHz
• 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY
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