[Excelics]
High Efficiency Heterojunction Power FET
• +29.5dBm TYPICAL OUTPUT POWER
• 9.5dB TYPICAL POWER GAIN AT 18GHz
• 0.3 X 1200 MICRON RECESSED
“MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
• Idss SORTED IN 30mA PER BIN RANGE