FEATURES
• VERY HIGH fmax: 120GHz
• +20.0dBm TYPICAL OUTPUT POWER
• 13.0dB TYPICAL POWER GAIN AT 18 GHz
• TYPICAL 0.75dB NOISE FIGURE AND 12.5dB ASSOCIATED GAIN AT 12GHz
• 0.3 X 180 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY
• Idss SORTED IN 5 mA PER BIN RANGE