EPA120D-CP083 データシート - Excelics Semiconductor, Inc.
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EPA120D-CP083
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Excelics Semiconductor, Inc.
FEATURES
• NON-HERMETIC SURFACE MOUNT
160MIL METAL CERAMIC PACKAGE
• +29 dBm OUTPUT POWER AT 1dB COMPRESSION
• 18.0 dB GAIN AT 2 GHz
• 0.5x1200 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES
HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
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