High Efficiency Heterojunction Power FET
• NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE
• +25.5dBm TYPICAL OUTPUT POWER
• 7.0dB TYPICAL POWER GAIN AT 12GHz
• 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY