EPA060AV データシート - Excelics Semiconductor, Inc.
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EPA060AV
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Excelics Semiconductor, Inc.
High Efficiency Heterojunction Power FET
• +26.5dBm TYPICAL OUTPUT POWER
• 10.5dB TYPICAL POWER GAIN FOR EPA060A AND 11.5dB FOR EPA060AV AT 18GHz
• 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
• EPA060AV WITH VIA HOLE SOURCE GROUNDING
• Idss SORTED IN 15mA PER BIN RANGE
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