EPA040AV データシート - Excelics Semiconductor, Inc.
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EPA040AV
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Excelics Semiconductor, Inc.
High Efficiency Heterojunction Power FET
· +24.5dBm TYPICAL OUTPUT POWER
· 11.0dB TYPICAL POWER GAIN FOR EPA040A AND 12.0dB FOR EPA040AV AT 18GHz
· 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE
· Si3N4 PASSIVATION
· ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
· EPA040AV WITH VIA HOLE SOURCE GROUNDING
· Idss SORTED IN 10mA PER BIN RANGE
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