IKW25N120T2(2008) データシートの表示（PDF） - Infineon Technologies

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IKW25N120T2
(Rev.:2008)

Low Loss DuoPack : IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

IKW25N120T2

TrenchStop® 2nd generation Series

15V

240V

1nF

960V

10V

100pF

5V

Ciss

Coss

Crss

0V

0nC

50nC

QGE, GATE CHARGE

Figure 17. Typical gate charge

(IC=25 A)

100nC

10pF

0V

10V

20V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 18. Typical capacitance as a function

of collector-emitter voltage

(VGE=0V, f = 1 MHz)

15µs

10µs

5µs

0µs

12V

14V

16V

18V

VGE, GATE-EMITTETR VOLTAGE

Figure 19. Short circuit withstand time as a

function of gate-emitter voltage

(VCE=600V, start at TJ ≤ 175°C)

200A

150A

100A

50A

0A

12V

14V

16V

18V

VGE, GATE-EMITTETR VOLTAGE

Figure 20. Typical short circuit collector

current as a function of gate-

emitter voltage

(VCE ≤ 600V, Tj,start = 175°C)

Power Semiconductors

9

Rev. 2.1 Sep 08

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