IKW25N120T2(2008) データシートの表示（PDF） - Infineon Technologies

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IKW25N120T2
(Rev.:2008)

Low Loss DuoPack : IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

IKW25N120T2

TrenchStop® 2nd generation Series

1000ns td(off)

100ns tf

td(on)

10ns

tr

10A

20A

30A

40A

IC, COLLECTOR CURRENT

Figure 9. Typical switching times as a

function of collector current

(inductive load, TJ=175°C,

VCE=600V, VGE=0/15V, RG=16.4Ω,

Dynamic test circuit in Figure E)

1000 ns

td(off)

tf

100 ns

td(on)

10 ns tr

5Ω 15Ω 25Ω 35Ω 45Ω 55Ω 65Ω 75Ω

RG, GATE RESISTOR

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, TJ=175°C,

VCE=600V, VGE=0/15V, IC=25A,

Dynamic test circuit in Figure E)

td(off)

100ns

tf

td(on)

tr

10ns

0°C

50°C

100°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, VCE=600V,

VGE=0/15V, IC=25A, RG=16.4Ω,

Dynamic test circuit in Figure E)

6.5V

6.0V

5.5V

5.0V

4.5V

4.0V

3.5V

max.

typ.

min.

0°C

50°C

100°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 12. Gate-emitter threshold voltage as

a function of junction temperature

(IC = 1.0mA)

Power Semiconductors

7

Rev. 2.1 Sep 08

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