IKW25N120T2(2008) データシートの表示（PDF） - Infineon Technologies

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IKW25N120T2
(Rev.:2008)

Low Loss DuoPack : IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

IKW25N120T2

TrenchStop® 2nd generation Series

600ns

500ns

400ns

300ns

200ns

100ns

4µC

3µC

TJ=175°C

2µC

TJ=25°C

1µC

TJ=175°C

TJ=25°C

0ns

400A/µs 800A/µs 1200A/µs 1600A/µs 2000A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 23. Typical reverse recovery time as

a function of diode current slope

(VR=600V, IF=25A,

Dynamic test circuit in Figure E)

0µC

400A/µs 800A/µs 1200A/µs 1600A/µs 2000A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 24. Typical reverse recovery charge

as a function of diode current

slope

(VR=600V, IF=25A,

Dynamic test circuit in Figure E)

35A

TJ=175°C

30A

-1200A/µs

25A

TJ=25°C

20A

-800A/µs

15A

10A

-400A/µs

TJ=25°C

TJ=175°C

5A

0A

400A/µs 800A/µs 1200A/µs 1600A/µs 2000A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 25. Typical reverse recovery current

as a function of diode current

slope

(VR=600V, IF=25A,

Dynamic test circuit in Figure E)

-0A/µs

400A/µs 800A/µs 1200A/µs 1600A/µs 2000A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 26. Typical diode peak rate of fall of

reverse recovery current as a

function of diode current slope

(VR=600V, IF=25A,

Dynamic test circuit in Figure E)

Power Semiconductors

11

Rev. 2.1 Sep 08

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