IKW25N120T2(2008) データシートの表示（PDF） - Infineon Technologies

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IKW25N120T2
(Rev.:2008)

Low Loss DuoPack : IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

IKW25N120T2

TrenchStop® 2nd generation Series

Thermal Resistance

Parameter

Characteristic

IGBT thermal resistance,

junction – case

Diode thermal resistance,

junction – case

Thermal resistance,

junction – ambient

Symbol

RthJC

RthJCD

RthJA

Conditions

Max. Value

Unit

0.43

K/W

0.81

40

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified

Parameter

Static Characteristic

Collector-emitter breakdown voltage

Collector-emitter saturation voltage

Diode forward voltage

Gate-emitter threshold voltage

Zero gate voltage collector current

Gate-emitter leakage current

Transconductance

Symbol

Conditions

V(BR)CES

VCE(sat)

VF

VGE(th)

ICES

VGE=0V, IC=500µA

VGE = 15V, IC=25A

Tj=25°C

Tj=150°C

Tj=175°C

VGE=0V, IF=25A

Tj=25°C

Tj=150°C

Tj=175°C

IC=1.0mA,VCE=VGE

VCE=1200V,

VGE=0V

Tj=25°C

Tj=150°C

Tj=175°C

IGES

gfs

VCE=0V,VGE=20V

VCE=20V, IC=25A

min.

1200

-

-

-

-

-

-

5.2

-

-

-

-

Value

typ.

-

1.7

2.1

2.2

1.65

1.7

1.65

5.8

-

-

-

13.5

Unit

max.

-V

2.2

-

-

2.2

-

-

6.4

mA

0.4

4.0

20

200 nA

-S

Power Semiconductors

2

Rev. 2.1 Sep 08

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