IKW25N120T2(2008) データシートの表示（PDF） - Infineon Technologies

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IKW25N120T2
(Rev.:2008)

Low Loss DuoPack : IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

IKW25N120T2

TrenchStop® 2nd generation Series

Switching Characteristic, Inductive Load, at Tj=175 °C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

Anti-Parallel Diode Characteristic

Diode reverse recovery time

Diode reverse recovery charge

Diode peak reverse recovery current

Diode peak rate of fall of reverse

recovery current during t b

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

trr

Qrr

Irrm

dirr/dt

Tj=175°C

VCC=600V,IC=25A,

VGE=0/15V,

RG= 16.4Ω,

Lσ1)=175nH,

Cσ1)=67pF

Energy losses include

“tail” and diode

reverse recovery.

Tj=175°C

VR=600V, IF=25A,

diF/dt=1000A/µs

min.

-

-

-

-

-

-

-

-

-

-

-

Value

typ.

25

24

340

164

2.25

2.05

4.3

290

3.65

24

330

Unit

max.

- ns

-

-

-

- mJ

-

-

- ns

- µC

-A

A/µs

1) Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.

Power Semiconductors

4

Rev. 2.1 Sep 08

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