IKW25N120T2(2008) データシートの表示（PDF） - Infineon Technologies

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IKW25N120T2
(Rev.:2008)

Low Loss DuoPack : IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

IKW25N120T2

TrenchStop® 2nd generation Series

*) Eon and Etsinclude losses

due to diode recovery

10.0mJ

5.0mJ

*) Eon and Ets include losses

due to diode recovery

Ets*

Ets*

7.5 mJ

5.0 mJ

Eon*

Eon*

Eoff

Eoff

2.5 mJ

0.0mJ

10A

20A

30A

40A

IC, COLLECTOR CURRENT

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, TJ=175°C,

VCE=600V, VGE=0/15V, RG=16.4Ω,

Dynamic test circuit in Figure E)

0.0 mJ

5Ω 15Ω 25Ω 35Ω 45Ω 55Ω 65Ω 75Ω

RG, GATE RESISTOR

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, TJ=175°C,

VCE=600V, VGE=0/15V, IC=25A,

Dynamic test circuit in Figure E)

*) Eon and Ets include losses

due to diode recovery

4mJ

Ets*

3mJ

2mJ

1mJ

Eon*

Eoff

0mJ

0°C

50°C

100°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 15. Typical switching energy losses

as a function of junction

temperature

(inductive load, VCE=600V,

VGE=0/15V, IC=25A, RG=16.4Ω,

Dynamic test circuit in Figure E)

*) Eon and Ets include losses

due to diode recovery

5.0mJ

Ets*

2.5mJ

Eoff

Eon*

0.0mJ

400V

500V

600V

700V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 16. Typical switching energy losses

as a function of collector emitter

voltage

(inductive load, TJ=175°C,

VGE=0/15V, IC=25A, RG=16.4Ω,

Dynamic test circuit in Figure E)

Power Semiconductors

8

Rev. 2.1 Sep 08

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