S8209 データシート - Toshiba
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S8209
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7 Pages
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Toshiba
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 9.2 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 20 V)
• Enhancement mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 μA)
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) ( Rev : 2004 )
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) ( Rev : 2004 )
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) ( Rev : 2001 )
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) ( Rev : 2001 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) ( Rev : 2003 )
Toshiba
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