S8209 データシートの表示（PDF） - Toshiba
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S8209 Datasheet PDF : 7 Pages
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TPCS8209
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-ON time
Fall time
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“miller”) charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = ±10 V, VDS = 0 V
⎯
⎯
±10
μA
IDSS
VDS = 20 V, VGS = 0 V
⎯
⎯
10
μA
V (BR) DSS
V (BR) DSX
ID = 10 mA, VGS = 0 V
ID = 10 mA, VGS = −12 V
20
⎯
⎯
V
8
⎯
⎯
Vth
VDS = 10 V, ID = 200 μA
0.5
⎯
1.2
V
VGS = 2.0 V, ID = 3.5 A
⎯
34
60
RDS (ON) VGS = 2.5 V, ID = 3.5 A
⎯
26
40
mΩ
VGS = 4.0 V, ID = 4.0 A
⎯
19
30
|Yfs|
VDS = 10 V, ID = 2.5 A
4.6 9.2
⎯
S
Ciss
⎯ 1280 ⎯
Crss
VDS = 10 V, VGS = 0 V, f = 1 MHz
⎯
130
⎯
pF
Coss
⎯
150
⎯
tr
VGS 5 V
ton
0V
⎯
4.5
⎯
ID = 2.5 A
VOUT
⎯
11
⎯
ns
tf
⎯
7.3
⎯
VDD ∼− 10 V
toff
Duty <= 1%, tw = 10 μs
⎯
33
⎯
Qg
Qgs1
Qgd
VDD ∼− 16 V, VGS = 5 V, ID = 5 A
⎯
15
⎯
⎯
3.3
⎯
nC
⎯
3.5
⎯
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Drain reverse current
Forward voltage (diode)
Pulse (Note 1)
Symbol
IDRP
VDSF
Test Condition
⎯
IDR = 5 A, VGS = 0 V
Min Typ. Max Unit
⎯
⎯
20
A
⎯
⎯
−1.2
V
3
2007-01-16
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