S8209 データシートの表示（PDF） - Toshiba
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S8209 Datasheet PDF : 7 Pages
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RDS (ON) – Ta
60
VGS = 2.0 V
50
2.5
40
ID = 5 A
VGS = 2.5 V
1.25
30
ID = 5, 2.5, 1.25 A
20
ID = 5, 2.5, 1.25 A
10
0
−50
0
50
VGS = 4.0 V
Common source
Pulse test
100
150
Ambient temperature Ta (°C)
TPCS8209
10
54
2
3
IDR – VDS
1
VGS = 0 V
1
0.5
0.3
Common source
Ta = 25°C
Pulse test
0.1
0
−0.2
−0.4
−0.6
−0.8
−1
Drain-source voltage VDS (V)
10000
Capacitance – VDS
Ciss
1000
Coss
100
Crss
Common source
Ta = 25°C
f = 1MHz
VGS = 0 V
10
0.1
1
10
100
Drain-source voltage VDS (V)
1.4
1.2
1
0.8
0.6
0.4
0.2
0
−100
Vth – Ta
Common source
VDS = 10 V
ID = 200 μA
Pulse test
−50
0
50
100
150
Ambient temperature Ta (°C)
1.2
(1)
1
0.8 (2)
(3)
0.6
PD – Ta
Device mounted on a glass-epoxy board (a)
(Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b)
(Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual
operation (Note 3b)
t = 10 s
0.4 (4)
0.2
0
0
50
100
150
200
Ambient temperature Ta (°C)
Dynamic input/output characteristics
30
12
Common source
25 ID = 5 A
10
Ta = 25°C
Pulse test
20
8
VDS = 16 V
15
VGS
6
10
4
5
2
0
0
0
4
8 12 16 20 24 28 32
Total gate charge Qg (nC)
5
2007-01-16
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