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TPCS8210(2001) データシート - Toshiba

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TPCS8210

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  2003   lastest PDF  

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Toshiba
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Lithium Ion Battery Applications

• Has a small footprint.
• Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 9.2 S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 20 V)
• Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA)
• Common drain

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) ( Rev : 2002 )
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
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