RD12MVP1(2010) データシート - Mitsumi
部品番号
RD12MVP1
Other PDF
PDF
page
8 Pages
File Size
130.9 kB
メーカー
Mitsumi
DESCRIPTION
RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
FEATURES
• High Power Gain
Pout>10W, Gp>13dB@Vdd=7.2V,f=175MHz
• High Efficiency: 55%min. (175MHz)
• No gate protection diode
APPLICATION
For output stage of high power amplifiers in VHF band mobile radio sets.
部品番号
コンポーネント説明
PDF
メーカー
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W
( Rev : 2006 )
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W
( Rev : 2010 )
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W ( Rev : 2010 )
MITSUBISHI ELECTRIC
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