DESCRIPTION
RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

FEATURES
• High Power Gain
   Pout>10W, Gp>13dB@Vdd=7.2V,f=175MHz
• High Efficiency: 55%min. (175MHz)
• No gate protection diode

APPLICATION
   For output stage of high power amplifiers in
   VHF band mobile radio sets.