RD12MVP1(2006) データシートの表示（PDF） - Mitsumi

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RD12MVP1
(Rev.:2006)

RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W

Mitsumi 

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

MITSUBISHI RF POWER MOS FET

RD12MVP1

RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W

TEST CIRCUIT (f=175MHz)

Vgg

Vdd

C1

C2 22uF,50V

W 19mm

19mm W

RD12MVP1

47pF

175MHz

4.7k Ohm

L2

47pF

RF-in 17mm

330pF

3.5mm

3mm 9.5mm

L1

9.5mm 3mm 14mm 9mm

100pF

24pF

54pF

RF-out

330pF

Note:Board material= glass-Epoxy Substrate

Micro strip line width=1.3mm/50OHM,er=4.8,t=0.8mm

W:Line width=1.0mm

L1:10.8nH,4Turns,D:0.43mm,1.66mm(outside diameter)

L2:43.7nH,6Turns,D:0.43mm,2.46mm(outside diameter)

C1,C2:2200pF

RD12MVP1

MITSUBISHI ELECTRIC

4/7

1st Jun. 2006

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