DESCRIPTION
The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology (our WSi gate laterally diffused MOS FET) and housed in a surface mount package. This device can deliver 32.0 dBm output power with 45% power added efficiency at 1.8 GHz under the 3.2 V supply voltage.

FEATURES
• High output power : Pout = 32.0 dBm TYP. (VDS = 3.2 V, IDset = 700 mA, f = 1.8 GHz, Pin = 25 dBm)
• High power added efficiency : add = 45% TYP. (VDS = 3.2 V, IDset = 700 mA, f = 1.8 GHz, Pin = 25 dBm)
• High linear gain : GL = 10 dB TYP. (VDS = 3.2 V, IDset = 700 mA, f = 1.8 GHz, Pin = 5 dBm)
• Surface mount package : 5.7  5.7  1.1 mm MAX.
• Single supply : VDS = 2.8 to 6.0 V

APPLICATION
• Digital cellular phones : 3.2 V DCS1800 Handsets