NE5520279A-T1   データシート

California Eastern Laboratories.

3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS

NEC => Renesas Technology

3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET

California Eastern Laboratories.

3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS

NEC => Renesas Technology

3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET

California Eastern Laboratories.

3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS

California Eastern Laboratories.

3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS

NEC => Renesas Technology

3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET

California Eastern Laboratories.

3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS

NEC => Renesas Technology

3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET

California Eastern Laboratories.

NEC'S 3.2 V, 3 W, L/S BAND MEDIUM POWER SILICON LD-MOSFET

California Eastern Laboratories.

NEC'S 3.2 V, 3 W, L/S BAND MEDIUM POWER SILICON LD-MOSFET

Philips Electronics

LVDT signal conditioner

Philips Electronics

LVDT signal conditioner

Philips Electronics

LVDT signal conditioner