Product Description
The QPD2194 is a discrete GaN on SiC HEMT which operates from 1.8-2.2 GHz. The device is a single stage pre-matched power amplifier transistor.
The QPD2194 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.
QPD2194 can deliver PSAT of 371 W at +48 V operation.
Lead-free and ROHS compliant.

Product Features
• Operating Frequency Range: 1.8-2.2 GHz
• Operating Drain Voltage: +48 V
• Maximum Output Power (PSAT): 371 W
• Maximum Drain Efficiency: 78.8%
• Efficiency-Tuned P3dB Gain: 18.0 dB
• 2-lead, earless, ceramic flange NI400 package

APPLICATIONs
• W-CDMA / LTE
• Macrocell Base Station, B3-B1
• Active Antenna