Introduction
The AGR18125E is a 125 W, 26 V, N-channel gold-metallized, laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multi-carrier class AB power amplifier applications. This device is manufactured using advanced LDMOS technology offering state-of-theart performance and reliability. It is packaged in an industry-standard package and is capable of delivering a minimum output power of 125 W which makes it ideally suited for today’s RF power amplifier applications.

FEATUREs
   Typical performance ratings for GSM EDGE
   (f = 1.840 GHz, POUT = 50 W)
   — Modulation spectrum:
      @ ± 400 kHz = –60 dBc.
      @ ± 600 kHz = –72 dBc.
   Typical performance over entire digital communication system (DCS) band:
   — P1dB: 125 W typical (typ).
   — Power gain: @ P1dB = 13.5 dB.
   — Efficiency: @ P1dB = 50% typ.
   — Return loss: –10 dB.
   High-reliability, gold-metallization process.
   Low hot carrier injection (HCI) induced bias drift
      over 20 years.
   Internally matched.
   High gain, efficiency, and linearity.
   Integrated ESD protection.
   125 W minimum output power.
   Device can withstand 10:1 voltage standing wave
      ratio (VSWR) at 28 Vdc, 1.840 GHz, 125 W continuous wave (CW) output power.
   Large signal impedance parameters available.