GENERAL DESCRIPTION
The K9K1208U0A are a 64M(67,108,864)x8bit NAND Flash Memory with a spare 2,048K(2,097,152)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528- byte page in typically 200ms and an erase operation can be performed in typically 2ms on a 16K-byte block. Data in the page can be read out at 60ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command inputs. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verify and margining of data. Even the write-intensive systems can take advantage of the K9K1208U0A¢s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9K1208U0A-YCB0/YIB0 is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

FEATURES
• Voltage Supply : 2.7V~3.6V
• Organization
   - Memory Cell Array : (64M + 2,048K)bit x 8bit
   - Data Register : (512 + 16)bit x8bit
• Automatic Program and Erase
   - Page Program : (512 + 16)Byte
   - Block Erase : (16K + 512)Byte
• 528-Byte Page Read Operation
   - Random Access : 10ms(Max.)
   - Serial Page Access : 60ns(Min.)
• Fast Write Cycle Time
   - Program time : 200ms(Typ.)
   - Block Erase Time : 2ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
   - Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
   - Endurance : 100K Program/Erase Cycles
   - Data Retention : 10 Years
• Command Register Operation
• Package :
   - K9K1208U0A-YCB0/YIB0 :
      48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)