datasheetbank_Logo
データシート検索エンジンとフリーデータシート
HOME  >>>  Samsung  >>> K9F2G08R0A PDF

K9F2G08R0A データシート - Samsung

K9F2G08R0A image

部品番号
K9F2G08R0A

コンポーネント説明

Other PDF
  no available.

PDF
DOWNLOAD     

page
44 Pages

File Size
977.1 kB

メーカー
Samsung
Samsung Samsung

GENERAL DESCRIPTION
Offered in 256Mx8bit, the K9F2G08X0A is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns(42ns with 1.8V device) cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F2G08X0A′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F2G08X0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.


FEATURES
• Voltage Supply
- 1.65V ~ 1.95V
- 2.70V ~ 3.60V
• Organization
- Memory Cell Array : (256M + 8M) x 8bit
- Data Register : (2K + 64) x 8bit
• Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
• Page Read Operation
- Page Size : (2K + 64)Byte
- Random Read : 25µs(Max.)
- Serial Access : 25ns(Min.)
(*K9F2G08R0A: tRC = 42ns(Min))
• Fast Write Cycle Time
- Page Program time : 200µs(Typ.)
- Block Erase Time : 1.5ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
- Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
-Endurance : 100K Program/Erase Cycles(with 1bit/512Byte
ECC)
- Data Retention : 10 Years
• Command Driven Operation
• Intelligent Copy-Back with internal 1bit/528Byte EDC
• Unique ID for Copyright Protection
• Package :
- K9F2G08R0A-JCB0/JIB0 : Pb-FREE PACKAGE
   63 - Ball FBGA I (10 x 13 / 0.8 mm pitch)
- K9F2G08U0A-PCB0/PIB0 : Pb-FREE PACKAGE
   48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F2G08U0A-ICB0/IIB0
   52 - Pin ULGA (12 x 17 / 1.00 mm pitch)

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

部品番号
コンポーネント説明
PDF
メーカー
256M x 8 Bit NAND Flash Memory
Samsung
256M x 8 Bit NAND Flash Memory
Samsung
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
Samsung
2 Gbit (256M x 8) 3.3V NAND Flash Memory
[Elite Semiconductor Memory Technology Inc.
2 Gbit (256M x 8) 3.3V NAND Flash Memory
[Elite Semiconductor Memory Technology Inc.
2 Gbit (256M x 8) 3.3V NAND Flash Memory
[Elite Semiconductor Memory Technology Inc.
2 Gbit (256M x 8) 1.8V NAND Flash Memory
[Elite Semiconductor Memory Technology Inc.
2 Gbit (256M x 8) 1.8V NAND Flash Memory
[Elite Semiconductor Memory Technology Inc.
64M x 8 Bit NAND Flash Memory
Samsung
64M x 8 Bit NAND Flash Memory
Samsung

Share Link: GO URL

EnglishEnglish Korean한국어 Japanese日本語 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]