K9K1208U0A-YIB0 データシートの表示（PDF） - Samsung
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K9K1208U0A-YIB0 Datasheet PDF : 27 Pages
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K9K1208U0A-YCB0, K9K1208U0A-YIB0
FLASH MEMORY
AC Timing Characteristics for Command / Address / Data Input
Parameter
Symbol
Min
Max
CLE setup Time
tCLS
0
-
CLE Hold Time
tCLH
10
-
CE setup Time
tCS
0
-
CE Hold Time
tCH
10
-
WE Pulse Width
tWP
25(1)
-
ALE setup Time
tALS
0
-
ALE Hold Time
tALH
10
-
Data setup Time
tDS
20
-
Data Hold Time
tDH
15
-
Write Cycle Time
tWC
60
-
WE High Hold Time
tWH
25
-
NOTE : 1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.
AC Characteristics for Operation
Parameter
Data Transfer from Cell to Register
ALE to RE Delay( ID read )
ALE to RE Delay(Read cycle)
CE to RE Delay( ID read)
Ready to RE Low
RE Pulse Width
WE High to Busy
Read Cycle Time
RE Access Time
RE High to Output Hi-Z
CE High to Output Hi-Z
RE High Hold Time
Output Hi-Z to RE Low
Last RE High to Busy(at sequential read)
CE High to Ready(in case of interception by CE at read)
CE High Hold Time(at the last serial read)(2)
RE Low to Status Output
CE Low to Status Output
WE High to RE Low
RE access time(Read ID)
Device Resetting Time(Read/Program/Erase)
Symbol
tR
tAR1
tAR2
tCR
tRR
tRP
tWB
tRC
tREA
tRHZ
tCHZ
tREH
tIR
tRB
tCRY
tCEH
tRSTO
tCSTO
tWHR
tREADID
tRST
Min
Max
-
10
100
-
50
-
100
-
20
-
30
-
-
100
60
-
-
35
15
30
-
20
25
-
0
-
-
100
-
50 +tr(R/B)(1)
100
-
-
35
-
45
60
-
-
35
-
5/10/500(3)
NOTE :
1. The time to Ready depends on the value of the pull-up resistor tied R/B pin.
2. To break the sequential read cycle, CE must be held high for longer time than tCEH.
3. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Unit
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
8
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