K9K1208U0A-YIB0 データシートの表示（PDF） - Samsung

部品番号

コンポーネント説明

一致するリスト

K9K1208U0A-YIB0

64M x 8 Bit NAND Flash Memory

Samsung 

K9K1208U0A-YCB0, K9K1208U0A-YIB0

FLASH MEMORY

NAND Flash Technical Notes (Continued)

Error in write or read operation

Over its life time, the additional invalid blocks may develop with NAND Flash memory. Refer to the qualification report for the actual

data.The following possible failure modes should be considered to implement a highly reliable system. In the case of status read fail-

ure after erase or program, block replacement should be done. To improve the efficiency of memory space, it is recommended that

the read or verification failure due to single bit error be reclaimed by ECC without any block replacement. The said additional block

failure rate does not include those reclaimed blocks.

Write

Read

Failure Mode

Erase Failure

Program Failure

Single Bit Failure

Detection and Countermeasure sequence

Status Read after Erase --> Block Replacement

Status Read after Program --> Block Replacement

Read back ( Verify after Program) --> Block Replacement

or ECC Correction

Verify ECC -> ECC Correction

ECC

: Error Correcting Code --> Hamming Code etc.

Example) 1bit correction & 2bit detection

Program Flow Chart

Start

Write 80h

Write Address

If ECC is used, this verification

operation is not needed.

Write 00h

Write Address

Write Data

Write 10h

Wait for tR Time

Verify Data

*

No Program Error

Read Status Register

I/O 6 = 1 ?

No

or R/B = 1 ?

*

No

Program Error

Yes

I/O 0 = 0 ?

Yes

Program Completed

* : If program operation results in an error, map out

the block including the page in error and copy the

target data to another block.

Yes

10

Share Link: