Description
The ATF-25170 is a high performance gallium arsenide Schottky barrier-gate field effect transistor housed in a hermetic, high reliability package. Its noise figure makes this device appropriate for use in low noise amplifiers operating in the 0.5-10 GHz frequency range.
This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 500 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.

FEATUREs
• Low Noise Figure: 0.8 dB Typical at 4 GHz
• High Associated Gain: 14.0 dB Typical at 4 GHz
• High Output Power: 21.0 dBm Typical P 1 dB at 4 GHz
• Hermetic Gold-Ceramic Microstrip Package