Description
The ATF-21170 is a high performance gallium arsenide Schottky barrier-gate field effect transistor housed in a hermetic, high reliability package. This device is designed for use in low noise or medium power amplifier applications in the 0.5-6 GHz frequency range.
This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 750 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.

FEATUREs
• Low Noise Figure: 0.9 dB Typical at 4 GHz
• High Associated Gain: 13.0 dB Typical at 4 GHz
• High Output Power: 23.0 dBm Typical P 1 dB at 4 GHz
• Hermetic Gold-Ceramic Microstrip Package