Description
The ATF-13336 is a high performance gallium arsenide Schottky barrier-gate field effect transistor housed in a cost effective microstrip package. Its premium noise figure makes this device appropriate for use in low noise amplifiers operating in the 2-16␣ GHz frequency range.
This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250␣ microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.

FEATUREs
• Low Noise Figure:
   1.4 dB Typical at 12 GHz
• High Associated Gain:
   9.0 dB Typical at 12 GHz
• High Output Power:
   17.5 dBm Typical P 1 dB at 12 GHz
• Cost Effective Ceramic
   Microstrip Package
• Tape-and-Reel Packaging
   Option Available[1]