Description
The ATF-10236 is a high performance gallium arsenide Schottky-barrier-gate field effect transistor housed in a cost effective microstrip package. Its low noise figure makes this device appropriate for use in the first and second stages of low noise amplifiers operating in the 0.5-12 GHz frequency range.
This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 500 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.

FEATUREs
• Low Noise Figure: 0.8 dB Typical at 4 GHz
• Low Bias: VDS= 2 V, IDS= 20 mA
• High Associated Gain: 13.0 dB Typical at 4 GHz
• High Output Power: 20.0 dBm Typical P1dBat 4 GHz
• Cost Effective Ceramic Microstrip Package
• Tape-And-Reel Packaging Option Available [1]