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28F128L18 データシート - Numonyx -> Micron

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部品番号
28F128L18

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106 Pages

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1.5 MB

メーカー
Numonyx
Numonyx -> Micron Numonyx

The Numonyx™ StrataFlash® Wireless Memory (L18) provides read-while-write and read-while-erase capability with density upgrades through 256-Mbit. This family of devices provides high performance at low voltage on a 16-bit data bus. Individually erasable memory blocks are sized for optimum code and data storage.

■ High performance Read-While-Write/Erase
  — 85 ns initial access
  — 54 MHz with zero wait state, 14 ns clock-to-data output synchronous-burst mode
  — 25 ns asynchronous-page mode
  — 4-, 8-, 16-, and continuous-word burst mode
  — Burst suspend
  — Programmable WAIT configuration
  — Buffered Enhanced Factory Programming (BEFP) at 5 µs/byte (Typ)
  — 1.8 V low-power buffered programming at 7 µs/byte (Typ)
■ Architecture
  — Asymmetrically-blocked architecture
  — Multiple 8-Mbit partitions: 128-Mbit devices
  — Multiple 16-Mbit partitions: 256-Mbit devices
  — Four 16-Kword parameter blocks: top or bottom configurations
  — 64-Kword main blocks
  — Dual-operation: Read-While-Write (RWW) or Read-While-Erase (RWE)
  — Status Register for partition and device status
■ Power
  — VCC (core) = 1.7 V - 2.0 V
  — VCCQ (I/O) = 1.35 V - 2.0 V, 1.7 V - 2.0 V
  — Standby current: 30 µA (Typ) for 256-Mbit
  — 4-Word synchronous read current: 15 mA (Typ) at 54 MHz
  — Automatic Power Savings mode
■ Security
  — OTP space: 64 unique factory device identifier bits; 64 user-programmable OTP bits; Additional 2048 user-programmable OTP bits
  — Absolute write protection: VPP = GND
  — Power-transition erase/program lockout
  — Individual zero-latency block locking
  — Individual block lock-down
■ Software
  — 20 µs (Typ) program suspend
  — 20 µs (Typ) erase suspend
  — Numonyx® Flash Data Integrator optimized
  — Basic Command Set (BCS) and Extended Command Set (ECS) compatible
  — Common Flash Interface (CFI) capable
■ Quality and Reliability
  — Expanded temperature: –25° C to +85° C
  — Minimum 100,000 erase cycles per block
  — Intel ETOX* VIII process technology (0.13 µm)
■ Density and Packaging
  — 128- and 256-Mbit density in VF BGA packages
  — 128/0 and 256/0 density in SCSP
  — 16-bit wide data bus

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部品番号
コンポーネント説明
PDF
メーカー
Intel StrataFlash® Wireless Memory (L18)
Intel
Numonyx™ StrataFlash® Wireless Memory(L30)
Numonyx -> Micron
StrataFlash Embedded Memory
Micron Technology
Intel StrataFlash® Embedded Memory
Intel
Intel StrataFlash® Memory (J3)
Intel
1.8Volt Intel StrataFlash®Wireless Memorywith3.0-VoltI/O(L30)
Intel
Intel StrataFlash® Embedded Memory (P30)
Intel
5 Volt Intel StrataFlash® Memory
Intel
4Kbit Wireless Memory Inlay
Ramtron International Corporation
Numonyx™ StrataFlash® Embedded Memory (P30)
Numonyx -> Micron

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