Introduction
This document provides information about the Numonyx™ StrataFlash® Embedded Memory (P30) product and describes its features, operation, and specifications.
The Numonyx™ StrataFlash® Embedded Memory (P30) product is the latest generation of Numonyx™ StrataFlash® memory devices. Offered in 64-Mbit up through 512-Mbit densities, the P30 device brings reliable, two-bit-per-cell storage technology to the embedded flash market segment. Benefits include more density in less space, highspeed interface, lowest cost-per-bit NOR device, and support for code and data storage. Features include high-performance synchronous-burst read mode, fast asynchronous access times, low power, flexible security options, and three industry standard package choices. The P30 product family is manufactured using Intel* 130 nm ETOX™ VIII process technology.

Product Features
■ High performance
    — 85 ns initial access
    — 52 MHz with zero wait states, 17ns clock-to-data output synchronous-burst read mode
    — 25 ns asynchronous-page read mode
    — 4-, 8-, 16-, and continuous-word burst mode
    — Buffered Enhanced Factory Programming (BEFP) at 5 μs/ byte (Typ)
    — 1.8 V buffered programming at 7 μs/byte (Typ)
■ Architecture
    — Multi-Level Cell Technology: Highest Density at Lowest Cost
    — Asymmetrically-blocked architecture
    — Four 32-KByte parameter blocks: top or bottom configuration
    — 128-KByte main blocks
■ Voltage and Power
    — VCC (core) voltage: 1.7 V – 2.0 V
    — VCCQ (I/O) voltage: 1.7 V – 3.6 V
    — Standby current: 20μA (Typ) for 64-Mbit
    — 4-Word synchronous read current: 13 mA (Typ) at 40 MHz
■ Quality and Reliability
    — Operating temperature: –40 °C to +85 °C
    — Minimum 100,000 erase cycles per block
    — ETOX™ VIII process technology
■ Security
    — One-Time Programmable Registers:
        • 64 unique factory device identifier bits
        • 2112 user-programmable OTP bits
    — Selectable OTP Space in Main Array:
        • Four pre-defined 128-KByte blocks (top or bottom configuration)
        • Up to Full Array OTP Lockout
    — Absolute write protection: VPP = VSS
    — Power-transition erase/program lockout
    — Individual zero-latency block locking
    — Individual block lock-down
■ Software
    — 20 μs (Typ) program suspend
    — 20 μs (Typ) erase suspend
    — Numonyx™ Flash Data Integrator optimized
    — Basic Command Set and Extended Command Set compatible
    — Common Flash Interface capable
■ Density and Packaging
    — 56- Lead TSOP package (64, 128, 256, 512- Mbit)
    — 64- Ball Numonyx™ Easy BGA package (64, 128, 256, 512- Mbit)
    — Numonyx™ QUAD+ SCSP (64, 128, 256, 512- Mbit)
    — 16-bit wide data bus