PHB38N02LT データシートの表示（PDF） - Philips Electronics

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PHB38N02LT

TrenchMOS™ logic level FET

Philips Electronics 

Philips Semiconductors

PHB/PHD38N02LT

TrenchMOS™ logic level FET

30

10 V 5 V 3 V

Tj = 25 °C

ID

(A)

20

2.6 V

03al24

2.4 V

2.2 V

25

ID VDS > ID x RDSon

(A)

20

15

03al26

10

10

2V

1.8 V

VGS = 1.6 V

0

0

0.2

0.4

0.6

0.8

1

VDS (V)

5

175 °C

Tj = 25 °C

0

0

1

2

3

VGS (V)

Tj = 25 °C

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values.

Tj = 25 °C and 175 °C; VDS > ID x RDSon

Fig 6. Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

03al25

30

2

Tj = 25 °C

VGS = 2.4 V

RDSon

a

(mΩ)

2.6 V

1.5

20

3V

1

5V

10

10 V

0.5

03af18

0

0

10

Tj = 25 °C

20 ID (A) 30

Fig 7. Drain-source on-state resistance as a function

of drain current; typical values.

0

-60

0

60

120

180

Tj (°C)

a = --------R---D----S---o---n-------

R D S o n ( 25 °C )

Fig 8. Normalized drain-source on-state resistance

factor as a function of junction temperature.

9397 750 11614

Product data

Rev. 01 — 30 June 2003

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

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