PHB38N02LT データシートの表示（PDF） - Philips Electronics

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PHB38N02LT

TrenchMOS™ logic level FET

Philips Electronics 

Philips Semiconductors

PHB/PHD38N02LT

TrenchMOS™ logic level FET

4. Thermal characteristics

Table 3: Thermal characteristics

Symbol Parameter

Conditions

Rth(j-mb)

Rth(j-a)

thermal resistance from junction to mounting base Figure 4

thermal resistance from junction to ambient

SOT428

SOT428 minimum footprint;

mounted on a PCB

SOT404 minimum footprint;

mounted on a PCB

SOT404

SOT404 minimum footprint;

mounted on a PCB

4.1 Transient thermal impedance

Min Typ Max Unit

- - 2.6 K/W

- 75 - K/W

- 50 - K/W

- 50 - K/W

10

Zth(j-mb)

(K/W)

δ = 0.5

1

0.2

0.1

0.05

10-1 0.02

single pulse

10-2

10-5

10-4

10-3

10-2

03al22

P

δ

=

tp

T

10-1

tp

t

T

tp (s)

1

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.

9397 750 11614

Product data

Rev. 01 — 30 June 2003

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

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