PHB38N02LT データシートの表示（PDF） - Philips Electronics
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PHB38N02LT Datasheet PDF : 13 Pages
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Philips Semiconductors
PHB/PHD38N02LT
TrenchMOS™ logic level FET
3. Limiting values
Table 2: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
25 °C ≤ Tj ≤ 175 oC
25 °C ≤ Tj ≤ 175 oC; RGS = 20 kΩ
Tmb = 25 °C; VGS = 5 V; Figure 2 and 3
Tmb = 100 °C; VGS = 5 V; Figure 2
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
Tmb = 25 °C; Figure 1
IS
source (diode forward) current (DC) Tmb = 25 °C
ISM
peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs
Min
Max Unit
-
20
V
-
20
V
-
12
V
-
44.7 A
-
31.6 A
-
179
A
-
57.6 W
−55
+175 °C
−55
+175 °C
-
44.7 A
-
179
A
9397 750 11614
Product data
Rev. 01 — 30 June 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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