PHB38N02LT データシートの表示（PDF） - Philips Electronics

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PHB38N02LT

TrenchMOS™ logic level FET

Philips Electronics 

PHB/PHD38N02LT

TrenchMOS™ logic level FET

Rev. 01 — 30 June 2003

Product data

1. Product profile

1.1 Description

N-channel logic level field-effect transistor in a plastic package using TrenchMOS™

technology.

Product availability:

PHB38N02LT in SOT404 (D2-PAK)

PHD38N02LT in SOT428 (D-PAK).

1.2 Features

s Low on-state resistance

s 2.5 V gate drive.

1.3 Applications

s Linear regulator for DDR memory.

1.4 Quick reference data

s VDS = 20 V

s Ptot = 57.6 W

s ID = 44.7 A

s RDSon ≤ 16 mΩ

2. Pinning information

Table 1: Pinning - SOT404 and SOT428 simplified outlines and symbol

Pin Description

Simplified outline

1 gate (g)

2 drain (d)

[1]

mb

mb

3 source (s)

mb mounting base;

connected to drain (d)

2

1

Top view

3

MBK091

2

1

3 MBK116

SOT428 (D-PAK)

SOT404 (D2-PAK)

[1] It is not possible to make connection to pin 2 of the SOT404 and SOT428 packages.

Symbol

d

g

MBB076

s

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