PHB38N02LT データシートの表示（PDF） - Philips Electronics

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PHB38N02LT

TrenchMOS™ logic level FET

Philips Electronics 

Philips Semiconductors

PHB/PHD38N02LT

TrenchMOS™ logic level FET

5. Characteristics

Table 4: Characteristics

Tj = 25 °C unless otherwise specified.

Symbol Parameter

Conditions

Static characteristics

V(BR)DSS drain-source breakdown voltage

VGS(th) gate-source threshold voltage

IDSS

drain-source leakage current

IGSS

RDSon

gate-source leakage current

drain-source on-state resistance

Dynamic characteristics

ID = 250 µA; VGS = 0 V

Tj = 25 °C

Tj = −55 °C

ID = 250 µA; VDS = VGS; Figure 9

Tj = 25 °C

Tj = 175 °C

Tj = −55 °C

VDS = 20 V; VGS = 0 V

Tj = 25 °C

Tj = 175 °C

VGS = ±12 V; VDS = 0 V

VGS = 5 V; ID = 25 A; Figure 7 and 8

Tj = 25 °C

Tj = 175 °C

VGS = 2.5 V; ID = 8 A; Figure 8

Qg(tot) total gate charge

Qgs

gate-source charge

Qgd

gate-drain (Miller) charge

Ciss

input capacitance

Coss

output capacitance

Crss

reverse transfer capacitance

td(on)

turn-on delay time

tr

rise time

td(off)

turn-off delay time

tf

fall time

Source-drain diode

ID = 25 A; VDD = 10 V; VGS = 5 V; Figure 13

VGS = 0 V; VDS = 20 V; f = 1 MHz; Figure 11

VDD = 10 V; ID = 25 A; VGS = 10 V; RG = 5.6 Ω

VSD

source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 12

Min Typ Max Unit

20 -

-

V

18 -

-

V

0.5 1

0.3 -

-

-

1.5 V

-

V

1.8 V

-

0.05 1 µA

-

-

500 µA

-

10 100 nA

-

13.5 16 mΩ

-

24.3 28.8 mΩ

-

20 30 mΩ

-

15.1 -

nC

-

4.5 -

nC

-

4.2 -

nC

-

800 -

pF

-

260 -

pF

-

190 -

pF

-

4-

ns

-

12.5 -

ns

-

30 -

ns

-

23 -

ns

-

0.98 1.2 V

9397 750 11614

Product data

Rev. 01 — 30 June 2003

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

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