TK60D08J1 データシート - Toshiba
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TK60D08J1
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Switching Regulator Application
• High-Speed switching
• Small gate charge: Qg = 86 nC (typ.)
• Low drain-source ON resistance: RDS (ON) = 6.2 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 120 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 75 V)
• Enhancement-mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) ( Rev : 2004 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
Toshiba
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