TK40D10J1 データシート - Toshiba
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TK40D10J1
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Switching Regulator Applications
• Small gate charge: Qg = 76nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 11.5 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 90 S
• Low leakage current: IDSS = 10 μA (max) (VDS = 100 V)
• Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
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