TK50X15J1 データシート - Toshiba
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TK50X15J1
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Toshiba
DC-DC Converters
• Low drain-source ON-resistance: RDS (ON) = 22 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 90 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 150 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) ( Rev : 2004 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ )
Toshiba
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Toshiba
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